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| WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) (1) Base Current Total Device Dissipation TA =25 C (2) Total Device Dissipation Tc=25 C (3) Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) IC (Pulse) I B (Pulse) PD PD Tj Tstg PNP/WTM772 NPN/WTM882 30 -30 -40 40 -5.0 5.0 3.0 -3.0 -7.0 -0.6 0.5 4 150 -55 to +150 7.0 0.6 Unit Vdc Vdc Vdc Adc Adc Adc W W C C Device Marking WTM772=B772 , WTM882=D882 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100/100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100/100 uAdc, IC=0) Collector Cutoff Current (VCE= -30/30 Vdc, I B =0) Collector Cutoff Current (VCB= -40/40 Vdc, IE=0) Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I C=0) NOTE: 1. Pulse Test: PW 350us, duty cycle 2% 2. Tested in free air condition, without heat-sink. 3. Mounted on a 40 40 1mm cerami board. _ _ _ _ Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min -30/30 -40/40 -5.0/5.0 - Max -1.0/1.0 -1.0/1.0 -1.0/1.0 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw WTM772 WTM882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification of hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 WEITRON http://www.weitron.com.tw WTM772 WTM882 F1. Total Power Dissipation VS. Ambient Temperature F.2 Derating Curve for All Types dT-Percentage of Rated Current-% PT-Total Power Dissipation-W 5 4 3 2 1 0 TA=25 C 100 80 Tc =2 5 C S/ b 60 40 20 0 0 lim ite d ti pa si is D on lim ite d 50 100 50 100 150 150 Ta-Amient Temperature-C Tc,Case Temperature(C) F4. Safe Operating Areas 10 Ic(max),Pulse Ic(max),DC F3. Thermal Resistance VS. Pulse Width 4Rth-Thermal Resistance- C/W 30 10 -Ic,Collector Current(A) VCE=10V IC =1.0A Duty=0.001 10 PW (Duty< 10 ms50 %) P Cycle < mS 1m S W =1 3 00 1 1 0.1 0.3 0.03 0.01 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 1 3 6 10 0.1 0.3 1 3 10 30 100 300 1000 30 VCEO MAX 60 3 0.3 Di s L sipa (S ing imite tion d le no nr s/b ep L im eti tiv ite ep d u ls e) PW-Pulse Width-ms VCE-Collector to Emitter Voltage-V S 1m 0. us 100 F5. Collector Current VS. Collector To Emitter Voltage -2.0 WTM772 WTM882 F6. Collector Current VS. Collector To Emitter Voltage 2.0 -Ic,Collector Current(A) -Ic,Collector Current(A) -1.6 -1.2 Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA IB=-6mA IB=-5mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA 0 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0 1.6 1.2 -0.8 0.8 -0.4 0.4 0 -4 -8 -12 -16 -20 0 vCE -Collector-Emitter Voltage(V) 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw WTM772 WTM882 VCE(sat)-Collector Saturation Voltage(V) F8. VCE(sat), VBE(sat),-Ic 10 6 3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 1000 600 hFE , -DC Current Gain WTM772 h FE VCE=2.0V Puse Test VBE(sat)-Base Saturation Voltage(V) F7. h FE, VBE -I c 300 100 60 30 10 6 3 1 0.001 0.003 0.01 VBE(sat) WTM772 WTM882 2 WTM88 t) sa VBE WTM772 WTM882 WTM772 VC E( M8 WT 82 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Ic-Collector Current(A) Ic-Collector Current(A) F9. fT - Ic f T -Gain Bandwidth Product(MHZ) 1000 F10. Cob -VCB , Cib -VCE Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) 300 100 VCE=5.0V Forecd air Cooling (with heat sink) 300 100 60 30 WTM 882 WTM77 2 Cib f=1.0MHz I E =0(Cob) IC=0(Cib) WTM882 WTM772 WTM77 2 30 10 WTM 882 Cob 10 6 3 3 1 0.01 1 3 6 10 30 60 0.03 0.1 0.3 1 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) Ic-Collector Cu rrent(A) WEITRON http://www.weitron.com.tw WT772M WT882M SOT-89 Outline Dimensions unit:mm SOT-89 E G A J C H K L B D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw |
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